VBZM50N03 Specs and Replacement

Type Designator: VBZM50N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 260 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 typ Ohm

Package: TO220AB

VBZM50N03 substitution

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VBZM50N03 datasheet

 ..1. Size:959K  cn vbsemi
 vbzm50n03.pdf pdf_icon

VBZM50N03

VBZM50N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.007 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.010 ID (A) 70 Configuration Single TO-220AB Package TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATIN... See More ⇒

 6.1. Size:834K  cn vbsemi
 vbzm50n06.pdf pdf_icon

VBZM50N03

VBZM50N06 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.013 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim... See More ⇒

Detailed specifications: VBZM20N10, VBZM20P06, VBZM30N06, VBZM3710, VBZM40N03, VBZM40N10, VBZM40P06, VBZM4N20, AON7506, VBZM50N06, VBZM60N06, VBZM60P03, VBZM630, VBZM630Y, VBZM75N03, VBZM75N80, VBZM75NF75

Keywords - VBZM50N03 MOSFET specs

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