All MOSFET. VBZM50N03 Datasheet

 

VBZM50N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZM50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 260(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007(typ) Ohm
   Package: TO220AB

 VBZM50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZM50N03 Datasheet (PDF)

 ..1. Size:959K  cn vbsemi
 vbzm50n03.pdf

VBZM50N03 VBZM50N03

VBZM50N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 Package with low thermal resistanceRDS(on) () at VGS = 10 V0.007 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V0.010ID (A) 70Configuration SingleTO-220ABPackageTO-220AB DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATIN

 6.1. Size:834K  cn vbsemi
 vbzm50n06.pdf

VBZM50N03 VBZM50N03

VBZM50N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.013 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STT03N10

 

 
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