All MOSFET. VBZM630Y Datasheet

 

VBZM630Y MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZM630Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058(typ) Ohm
   Package: TO220AB

 VBZM630Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZM630Y Datasheet (PDF)

 ..1. Size:931K  cn vbsemi
 vbzm630y.pdf

VBZM630Y VBZM630Y

VBZM630Ywww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ( )ID (A) 175 C Junction TemperatureRoHS0.058at VGS =10V35200 COMPLIANT New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDGG D SSN-Channel MOSFETABSOLUTE MAXIMUM RA

 7.1. Size:825K  cn vbsemi
 vbzm630.pdf

VBZM630Y VBZM630Y

VBZM630www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RAT

 9.1. Size:936K  cn vbsemi
 vbzm60p03.pdf

VBZM630Y VBZM630Y

VBZM60P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS -30V TrenchFET Power MOSFETRDS(on) VGS = 10 V 8m 100 % Rg TestedRoHSRDS(on) VGS = 4.5 V 11mCOMPLIANT 100 % UIS TestedID -70AAPPLICATIONSConfiguration Single Load Switch Notebook Adaptor SwitchTO-220AB S G G D SD Top ViewP-C

 9.2. Size:846K  cn vbsemi
 vbzm60n06.pdf

VBZM630Y VBZM630Y

VBZM60N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS 60V TrenchFET Power MOSFETRDS(on) VGS = 10 V 5 m Material categorization:ID 120AConfiguration SingleTO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-So

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History: VBZ7001 | AP3990W

 

 
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