VBZM75N03 Datasheet and Replacement
Type Designator: VBZM75N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 525 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006(typ) Ohm
Package: TO220AB
- MOSFET Cross-Reference Search
VBZM75N03 Datasheet (PDF)
vbzm75n03.pdf

VBZM75N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V0.006 Compliant to RoHS Directive 2011/65/EURDS(on) () at VGS = 4.5 V0.009ID (A)80Configuration Single DTO-220ABPackageTO-220AB GSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TA =
vbzm75n80.pdf

VBZM75N80www.VBsemi.comN-Channel 80 V (D-S) MOSFETPRODUCT SUMMARYFEATURES80VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 6m 100 % Rg and UIS TestedRDS(on) VGS = 4.5 V 14m120ID AConfiguration SingleTO-220AB DGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitDrain-Sourc
vbzm75nf75.pdf

VBZM75NF75www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET80VDS V 100 % Rg and UIS TestedRDS(on) VGS = 10 V 7m9RDS(on) VGS = 4.5 V mAPPLICATIONS100ID A Primary Side SwitchingConfiguration Single Synchronous Rectification DC/AC InvertersTO-220AB D LED BacklightingGTop ViewSN-C
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SDF150 | CED05N8 | MC08N005C | AON6794 | FDP8440 | IRLR024 | BL10N70-A
Keywords - VBZM75N03 MOSFET datasheet
VBZM75N03 cross reference
VBZM75N03 equivalent finder
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VBZM75N03 replacement
History: SDF150 | CED05N8 | MC08N005C | AON6794 | FDP8440 | IRLR024 | BL10N70-A



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