VBZM75N80 Datasheet and Replacement
Type Designator: VBZM75N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 35.5 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006(typ) Ohm
Package: TO220AB
VBZM75N80 substitution
VBZM75N80 Datasheet (PDF)
vbzm75n80.pdf

VBZM75N80www.VBsemi.comN-Channel 80 V (D-S) MOSFETPRODUCT SUMMARYFEATURES80VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 6m 100 % Rg and UIS TestedRDS(on) VGS = 4.5 V 14m120ID AConfiguration SingleTO-220AB DGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitDrain-Sourc
vbzm75n03.pdf

VBZM75N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V0.006 Compliant to RoHS Directive 2011/65/EURDS(on) () at VGS = 4.5 V0.009ID (A)80Configuration Single DTO-220ABPackageTO-220AB GSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TA =
vbzm75nf75.pdf

VBZM75NF75www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET80VDS V 100 % Rg and UIS TestedRDS(on) VGS = 10 V 7m9RDS(on) VGS = 4.5 V mAPPLICATIONS100ID A Primary Side SwitchingConfiguration Single Synchronous Rectification DC/AC InvertersTO-220AB D LED BacklightingGTop ViewSN-C
Datasheet: VBZM4N20 , VBZM50N03 , VBZM50N06 , VBZM60N06 , VBZM60P03 , VBZM630 , VBZM630Y , VBZM75N03 , STF13NM60N , VBZM75NF75 , VBZM80N03 , VBZM80N04 , VBZM80N06 , VBZM80N10 , VBZM80N80 , VBZM8N50 , VBZM8N60 .
Keywords - VBZM75N80 MOSFET datasheet
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History: 2N7261U | VP0106



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