VBZMB18N65 Specs and Replacement

Type Designator: VBZMB18N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 typ Ohm

Package: TO220FP

VBZMB18N65 substitution

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VBZMB18N65 datasheet

 ..1. Size:827K  cn vbsemi
 vbzmb18n65.pdf pdf_icon

VBZMB18N65

VBZMB18N65 www.VBsemi.com N-Channel 650V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) Low input capacitance (Ciss) 71 Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche ener... See More ⇒

 6.1. Size:1258K  cn vbsemi
 vbzmb18n50.pdf pdf_icon

VBZMB18N65

VBZMB18N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 550V FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.26 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration ... See More ⇒

 8.1. Size:617K  cn vbsemi
 vbzmb12n65.pdf pdf_icon

VBZMB18N65

VBZMB12N65 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configu... See More ⇒

 8.2. Size:617K  cn vbsemi
 vbzmb10n65.pdf pdf_icon

VBZMB18N65

VBZMB10N65 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Config... See More ⇒

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Detailed specifications: VBZM80N10, VBZM80N80, VBZM8N50, VBZM8N60, VBZMB10N65, VBZMB12N65, VBZMB13N50, VBZMB18N50, IRFZ24N, VBZMB20N65, VBZMB20N65S, VBZMB2N65, VBZMB4N65, VBZMB7N65, VBZMB8N60, VBZP50N50S, VBZQA120N03

Keywords - VBZMB18N65 MOSFET specs

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