All MOSFET. VBZQF50N03 Datasheet

 

VBZQF50N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZQF50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 21.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10(max) nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 236(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3EP

 VBZQF50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZQF50N03 Datasheet (PDF)

 ..1. Size:1989K  cn vbsemi
 vbzqf50n03.pdf

VBZQF50N03 VBZQF50N03

VBZQF50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES30 VVDS Halogen-freeRDS(on),typ VGS=10V 13 m TrenchFET Power MOSFETRoHSRDS(on),typ VGS=4.5V 19 m 100 % Rg and UIS Tested COMPLIANT ID 50 AAPPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View Bottom View Top View 1827G 36

 7.1. Size:1952K  cn vbsemi
 vbzqf50p03.pdf

VBZQF50N03 VBZQF50N03

VBZQF50P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESVVDS -30 TrenchFET power MOSFET 100 % Rg and UIS testedRDS(on),typ VGS=10V 9 mRDS(on),typ VGS=4.5V 17 mAPPLICATIONSAID -50 Notebook battery charging Notebook adapter switchDFN 3x3 EPS Bottom View Top View Top ViewG18 273645DPin 1P-Channel MOSFETABSOLUTE M

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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