XP132A1275SR Specs and Replacement

Type Designator: XP132A1275SR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

XP132A1275SR substitution

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XP132A1275SR datasheet

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XP132A1275SR

XP132A1275SR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi... See More ⇒

Detailed specifications: VBZQA50P03, VBZQA80N03, VBZQF50N03, VBZQF50P03, WNM2016-3, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, EMB04N03H, XP161A11A1PR, XP161A1355PR, XP202A0003PR, ZXMC6A09DN8T, ZXMN4A06GT, ZXMP10A17GTA, ZXMP6A18DN8TA, NCE0102

Keywords - XP132A1275SR MOSFET specs

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