All MOSFET. XP132A1275SR Datasheet

 

XP132A1275SR Datasheet and Replacement


   Type Designator: XP132A1275SR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1700 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
 

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XP132A1275SR Datasheet (PDF)

 ..1. Size:850K  cn vbsemi
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XP132A1275SR

XP132A1275SRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typi

Datasheet: VBZQA50P03 , VBZQA80N03 , VBZQF50N03 , VBZQF50P03 , WNM2016-3 , WNM2020-3 , WPM2015-3-TR , WPM2341A-3-TR , 2SK3918 , XP161A11A1PR , XP161A1355PR , XP202A0003PR , ZXMC6A09DN8T , ZXMN4A06GT , ZXMP10A17GTA , ZXMP6A18DN8TA , NCE0102 .

History: IPB65R280E6 | IXFH30N85X

Keywords - XP132A1275SR MOSFET datasheet

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