ZXMC6A09DN8T Specs and Replacement
Type Designator: ZXMC6A09DN8T
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
ZXMC6A09DN8T substitution
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ZXMC6A09DN8T datasheet
zxmc6a09dn8t.pdf
ZXMC6A09DN8T www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at ... See More ⇒
zxmc6a09dn8.pdf
ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,... See More ⇒
Detailed specifications: WNM2016-3, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, XP161A1355PR, XP202A0003PR, AO4407A, ZXMN4A06GT, ZXMP10A17GTA, ZXMP6A18DN8TA, NCE0102, NCE0103M, NCE0103Y, NCE0106R, NCE0106Z
Keywords - ZXMC6A09DN8T MOSFET specs
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History: DH100P30A | ZXMP6A18DN8TA
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