ZXMC6A09DN8T MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMC6A09DN8T
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
ZXMC6A09DN8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMC6A09DN8T Datasheet (PDF)
zxmc6a09dn8t.pdf
ZXMC6A09DN8Twww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at
zxmc6a09dn8.pdf
ZXMC6A09DN8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,
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