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ZXMC6A09DN8T Datasheet and Replacement


   Type Designator: ZXMC6A09DN8T
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SO8
 

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ZXMC6A09DN8T Datasheet (PDF)

 ..1. Size:911K  cn vbsemi
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ZXMC6A09DN8T

ZXMC6A09DN8Twww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at

 3.1. Size:297K  diodes
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ZXMC6A09DN8T

ZXMC6A09DN8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,

Datasheet: WNM2016-3 , WNM2020-3 , WPM2015-3-TR , WPM2341A-3-TR , XP132A1275SR , XP161A11A1PR , XP161A1355PR , XP202A0003PR , AO3407 , ZXMN4A06GT , ZXMP10A17GTA , ZXMP6A18DN8TA , NCE0102 , NCE0103M , NCE0103Y , NCE0106R , NCE0106Z .

History: FCPF850N80Z

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