All MOSFET. NCE0117I Datasheet

 

NCE0117I MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE0117I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO251

 NCE0117I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE0117I Datasheet (PDF)

 ..1. Size:355K  ncepower
 nce0117i.pdf

NCE0117I NCE0117I

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

 7.1. Size:441K  1
 nce0117k.pdf

NCE0117I NCE0117I

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.2. Size:373K  ncepower
 nce0117.pdf

NCE0117I NCE0117I

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.3. Size:653K  ncepower
 nce0117ak.pdf

NCE0117I NCE0117I

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR

 7.4. Size:436K  ncepower
 nce0117k.pdf

NCE0117I NCE0117I

Pb Free Producthttp://www.ncepower.com NCE0117KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.5. Size:833K  cn vbsemi
 nce0117.pdf

NCE0117I NCE0117I

NCE0117www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

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History: NTJS4405NT1 | HUF76432P3

 

 
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