Справочник MOSFET. NCE0117I

 

NCE0117I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0117I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9.3 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для NCE0117I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0117I Datasheet (PDF)

 ..1. Size:355K  ncepower
nce0117i.pdfpdf_icon

NCE0117I

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

 7.1. Size:441K  1
nce0117k.pdfpdf_icon

NCE0117I

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.2. Size:373K  ncepower
nce0117.pdfpdf_icon

NCE0117I

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.3. Size:653K  ncepower
nce0117ak.pdfpdf_icon

NCE0117I

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR

Другие MOSFET... NCE0103M , NCE0103Y , NCE0106R , NCE0106Z , NCE0110AK , NCE0110AS , NCE0110K , NCE0115K , IRF640 , NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA , NCE0140K2 , NCE0140KA , NCE0157 , NCE0157A2 .

History: B640 | APT5010JVRU3 | 5N65G

 

 
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