NCE0117I Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE0117I
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9.3 ns
Cossⓘ - Выходная емкость: 240 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: TO251
Аналог (замена) для NCE0117I
NCE0117I Datasheet (PDF)
nce0117i.pdf

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)
nce0117k.pdf

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117.pdf

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117ak.pdf

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR
Другие MOSFET... NCE0103M , NCE0103Y , NCE0106R , NCE0106Z , NCE0110AK , NCE0110AS , NCE0110K , NCE0115K , IRF640 , NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA , NCE0140K2 , NCE0140KA , NCE0157 , NCE0157A2 .
History: B640 | APT5010JVRU3 | 5N65G
History: B640 | APT5010JVRU3 | 5N65G



Список транзисторов
Обновления
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