All MOSFET. NCE01H10 Datasheet

 

NCE01H10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE01H10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 85 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 340 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
   Package: TO220

 NCE01H10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE01H10 Datasheet (PDF)

 ..1. Size:377K  ncepower
nce01h10.pdf

NCE01H10
NCE01H10

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 0.1. Size:320K  ncepower
nce01h10d.pdf

NCE01H10
NCE01H10

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 7.1. Size:358K  ncepower
nce01h13.pdf

NCE01H10
NCE01H10

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 7.2. Size:416K  ncepower
nce01h11.pdf

NCE01H10
NCE01H10

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: LSE65R099GT | NP88N055MHE

 

 
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