Справочник MOSFET. NCE01H10

 

NCE01H10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE01H10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE01H10

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE01H10 Datasheet (PDF)

 ..1. Size:377K  ncepower
 nce01h10.pdf pdf_icon

NCE01H10

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 0.1. Size:320K  ncepower
 nce01h10d.pdf pdf_icon

NCE01H10

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 7.1. Size:358K  ncepower
 nce01h13.pdf pdf_icon

NCE01H10

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 7.2. Size:458K  ncepower
 nce01h13d.pdf pdf_icon

NCE01H10

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE0125AK , NCE0130A , NCE0130KA , NCE0140K2 , NCE0140KA , NCE0157 , NCE0157A2 , NCE0157D , P55NF06 , NCE01H10D , NCE01H11 , NCE01H13 , NCE01H21T , NCE01P03S , NCE01P13K , NCE01P18D , NCE01P18K .

History: 2SK2173 | QM3009K | HGN035N08AL | EN2301 | CEP04N6 | IPB039N04LG | FTK3018

 

 
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