NCE01P18K Specs and Replacement

Type Designator: NCE01P18K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

NCE01P18K substitution

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NCE01P18K datasheet

 ..1. Size:430K  ncepower
 nce01p18k.pdf pdf_icon

NCE01P18K

Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON) ... See More ⇒

 6.1. Size:343K  ncepower
 nce01p18l.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 6.2. Size:562K  ncepower
 nce01p18d.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 6.3. Size:713K  ncepower
 nce01p18.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R ... See More ⇒

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Detailed specifications: NCE01H10, NCE01H10D, NCE01H11, NCE01H13, NCE01H21T, NCE01P03S, NCE01P13K, NCE01P18D, IRFP250N, NCE01P30, NCE0202M, NCE0202ZA, NCE0208KA, NCE0224, NCE0224D, NCE0224K, NCE0240

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