Справочник MOSFET. NCE01P18K

 

NCE01P18K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE01P18K
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 129 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE01P18K

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE01P18K Datasheet (PDF)

 ..1. Size:430K  ncepower
nce01p18k.pdfpdf_icon

NCE01P18K

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 6.1. Size:343K  ncepower
nce01p18l.pdfpdf_icon

NCE01P18K

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.2. Size:562K  ncepower
nce01p18d.pdfpdf_icon

NCE01P18K

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.3. Size:713K  ncepower
nce01p18.pdfpdf_icon

NCE01P18K

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

Другие MOSFET... NCE01H10 , NCE01H10D , NCE01H11 , NCE01H13 , NCE01H21T , NCE01P03S , NCE01P13K , NCE01P18D , AON7408 , NCE01P30 , NCE0202M , NCE0202ZA , NCE0208KA , NCE0224 , NCE0224D , NCE0224K , NCE0240 .

History: R6509KNX | WMK53N65F2 | AP9918J | SQM110P06-8M9L | TPP60R3K4C | CSD17585F5

 

 
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