NCE01P18K. Аналоги и основные параметры

Наименование производителя: NCE01P18K

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 70 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 73 ns

Cossⓘ - Выходная емкость: 129 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO252

Аналог (замена) для NCE01P18K

- подборⓘ MOSFET транзистора по параметрам

 

NCE01P18K даташит

 ..1. Size:430K  ncepower
 nce01p18k.pdf pdf_icon

NCE01P18K

Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 6.1. Size:343K  ncepower
 nce01p18l.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.2. Size:562K  ncepower
 nce01p18d.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.3. Size:713K  ncepower
 nce01p18.pdf pdf_icon

NCE01P18K

http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE01H10, NCE01H10D, NCE01H11, NCE01H13, NCE01H21T, NCE01P03S, NCE01P13K, NCE01P18D, IRFP250N, NCE01P30, NCE0202M, NCE0202ZA, NCE0208KA, NCE0224, NCE0224D, NCE0224K, NCE0240