All MOSFET. NCE0202M Datasheet

 

NCE0202M MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE0202M
   Marking Code: 0202M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: SOT89

 NCE0202M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE0202M Datasheet (PDF)

 ..1. Size:283K  ncepower
 nce0202m.pdf

NCE0202M NCE0202M

http://www.ncepower.com NCE0202MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS = 200V,ID =2A SRDS(ON)

 7.1. Size:287K  ncepower
 nce0202za.pdf

NCE0202M NCE0202M

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.1. Size:305K  ncepower
 nce0205ia.pdf

NCE0202M NCE0202M

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:322K  ncepower
 nce0208ia.pdf

NCE0202M NCE0202M

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.3. Size:433K  ncepower
 nce0208ka.pdf

NCE0202M NCE0202M

Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.4. Size:324K  ncepower
 nce0203s.pdf

NCE0202M NCE0202M

Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

 8.5. Size:707K  ncepower
 nce020n30k.pdf

NCE0202M NCE0202M

Pb Free Producthttp://www.ncepower.comNCE020N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE020N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =180ADS DR =1.9 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =2.6 m @ V =4.5V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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