NCE0224K Datasheet and Replacement
Type Designator: NCE0224K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO252
NCE0224K substitution
NCE0224K Datasheet (PDF)
nce0224k.pdf

Pb Free Producthttp://www.ncepower.com NCE0224KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224f.pdf

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224af.pdf

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224.pdf

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)
Datasheet: NCE01P18D , NCE01P18K , NCE01P30 , NCE0202M , NCE0202ZA , NCE0208KA , NCE0224 , NCE0224D , IRF1010E , NCE0240 , NCE0240F , NCE0260 , NCE0275T , NCE1216 , NCE12P09S , NCE1502R , NCE1503S .
Keywords - NCE0224K MOSFET datasheet
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