NCE3050K Specs and Replacement
Type Designator: NCE3050K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
NCE3050K substitution
- MOSFET ⓘ Cross-Reference Search
NCE3050K datasheet
nce3050k.pdf
Pb Free Product http //www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
nce3050.pdf
Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
nce3050i.pdf
Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
Detailed specifications: NCE2333Y, NCE3008M, NCE3011E, NCE3018AS, NCE3020Q, NCE3025Q, NCE3035Q, NCE3050, 20N50, NCE3065K, NCE3080IA, NCE3080K, NCE3090K, NCE3095G, NCE3095K, NCE30D0808J, NCE30D2519K
Keywords - NCE3050K MOSFET specs
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