NCE3050K Datasheet and Replacement
Type Designator: NCE3050K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
NCE3050K substitution
NCE3050K Datasheet (PDF)
nce3050k.pdf

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
nce3050ka.pdf

Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
nce3050.pdf

Pb Free Producthttp://www.ncepower.com NCE3050NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
nce3050i.pdf

Pb Free Producthttp://www.ncepower.com NCE3050INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
Datasheet: NCE2333Y , NCE3008M , NCE3011E , NCE3018AS , NCE3020Q , NCE3025Q , NCE3035Q , NCE3050 , IRF530 , NCE3065K , NCE3080IA , NCE3080K , NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K .
Keywords - NCE3050K MOSFET datasheet
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History: JCS3N80S | APT37F50B



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