All MOSFET. NCE3065K Datasheet

 

NCE3065K Datasheet and Replacement


   Type Designator: NCE3065K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
 

 NCE3065K substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE3065K Datasheet (PDF)

 ..1. Size:429K  ncepower
nce3065k.pdf pdf_icon

NCE3065K

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

 7.1. Size:664K  ncepower
nce3065g.pdf pdf_icon

NCE3065K

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 7.2. Size:723K  ncepower
nce3065q.pdf pdf_icon

NCE3065K

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 8.1. Size:833K  ncepower
nce3068q.pdf pdf_icon

NCE3065K

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve

Datasheet: NCE3008M , NCE3011E , NCE3018AS , NCE3020Q , NCE3025Q , NCE3035Q , NCE3050 , NCE3050K , CS150N03A8 , NCE3080IA , NCE3080K , NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K , NCE30H10AK .

History: NCEP070N10GU | KIA2906A-247

Keywords - NCE3065K MOSFET datasheet

 NCE3065K cross reference
 NCE3065K equivalent finder
 NCE3065K lookup
 NCE3065K substitution
 NCE3065K replacement

 

 
Back to Top

 


 
.