NCE3065K Specs and Replacement

Type Designator: NCE3065K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO252

NCE3065K substitution

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NCE3065K datasheet

 ..1. Size:429K  ncepower
 nce3065k.pdf pdf_icon

NCE3065K

http //www.ncepower.com NCE3065K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON) ... See More ⇒

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 nce3065g.pdf pdf_icon

NCE3065K

http //www.ncepower.com NCE3065G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =7.7m (typical) @ V =4.5V Application DS(ON) GS DC/... See More ⇒

 7.2. Size:723K  ncepower
 nce3065q.pdf pdf_icon

NCE3065K

http //www.ncepower.com NCE3065Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =4.2m (typical) @ V =10V DS(ON) GS R =6.7m (typical) @ V =4.5V Application DS(ON) GS DC/... See More ⇒

 8.1. Size:833K  ncepower
 nce3068q.pdf pdf_icon

NCE3065K

http //www.ncepower.com NCE3068Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =68A DS(ON) DS D used in a wide variety of applications. R =3.5m (max) @ V =10V DS(ON) GS R =6.2m (max) @ V =4.5V Application DS(ON) GS DC/DC Conve... See More ⇒

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Detailed specifications: NCE3008M, NCE3011E, NCE3018AS, NCE3020Q, NCE3025Q, NCE3035Q, NCE3050, NCE3050K, IRF520, NCE3080IA, NCE3080K, NCE3090K, NCE3095G, NCE3095K, NCE30D0808J, NCE30D2519K, NCE30H10AK

Keywords - NCE3065K MOSFET specs

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