Справочник MOSFET. NCE3065K

 

NCE3065K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3065K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 205 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCE3065K

 

 

NCE3065K Datasheet (PDF)

 ..1. Size:429K  ncepower
 nce3065k.pdf

NCE3065K NCE3065K

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

 7.1. Size:664K  ncepower
 nce3065g.pdf

NCE3065K NCE3065K

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 7.2. Size:723K  ncepower
 nce3065q.pdf

NCE3065K NCE3065K

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 8.1. Size:833K  ncepower
 nce3068q.pdf

NCE3065K NCE3065K

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve

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