NCE3080IA Specs and Replacement

Type Designator: NCE3080IA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO251

NCE3080IA substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3080IA datasheet

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NCE3080IA

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NCE3080IA

Pb Free Product http //www.ncepower.com NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

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NCE3080IA

Pb Free Product http //www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

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NCE3080IA

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Detailed specifications: NCE3011E, NCE3018AS, NCE3020Q, NCE3025Q, NCE3035Q, NCE3050, NCE3050K, NCE3065K, IRF2807, NCE3080K, NCE3090K, NCE3095G, NCE3095K, NCE30D0808J, NCE30D2519K, NCE30H10AK, NCE30H10K

Keywords - NCE3080IA MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.