NCE30P12S MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE30P12S
Marking Code: 30P12
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
NCE30P12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE30P12S Datasheet (PDF)
nce30p12s.pdf
Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1
nce30p12bs.pdf
http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR
nce30p15s.pdf
Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)
nce30p10s.pdf
http://www.ncepower.com NCE30P10SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)
nce30p15as.pdf
Pb Free Producthttp://www.ncepower.com NCE30P15ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)
nce30p16q.pdf
Pb Free Producthttp://www.ncepower.com NCE30P16QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)
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