NCE30P12S. Аналоги и основные параметры

Наименование производителя: NCE30P12S

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 215 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: SOP8

Аналог (замена) для NCE30P12S

- подборⓘ MOSFET транзистора по параметрам

 

NCE30P12S даташит

 ..1. Size:364K  ncepower
 nce30p12s.pdf pdf_icon

NCE30P12S

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

 6.1. Size:710K  ncepower
 nce30p12bs.pdf pdf_icon

NCE30P12S

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R

 7.1. Size:341K  ncepower
 nce30p15s.pdf pdf_icon

NCE30P12S

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 7.2. Size:277K  ncepower
 nce30p10s.pdf pdf_icon

NCE30P12S

http //www.ncepower.com NCE30P10S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

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