All MOSFET. NCE40H12I Datasheet

 

NCE40H12I MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE40H12I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO251

 NCE40H12I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE40H12I Datasheet (PDF)

 ..1. Size:392K  ncepower
 nce40h12i.pdf

NCE40H12I NCE40H12I

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.1. Size:401K  ncepower
 nce40h12.pdf

NCE40H12I NCE40H12I

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.2. Size:458K  ncepower
 nce40h12k.pdf

NCE40H12I NCE40H12I

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.3. Size:664K  ncepower
 nce40h12a.pdf

NCE40H12I NCE40H12I

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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