NCE40H12I Specs and Replacement

Type Designator: NCE40H12I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO251

NCE40H12I substitution

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NCE40H12I datasheet

 ..1. Size:392K  ncepower
 nce40h12i.pdf pdf_icon

NCE40H12I

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

 6.1. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H12I

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

 6.2. Size:458K  ncepower
 nce40h12k.pdf pdf_icon

NCE40H12I

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 6.3. Size:664K  ncepower
 nce40h12a.pdf pdf_icon

NCE40H12I

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R ... See More ⇒

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Detailed specifications: NCE4009S, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K, NCE40H12, 10N60, NCE40H12K, NCE40H20A, NCE40H21, NCE40H29D, NCE40ND0812S, NCE40P05S, NCE40P07S, NCE40P13S

Keywords - NCE40H12I MOSFET specs

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