Справочник MOSFET. NCE40H12I

 

NCE40H12I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE40H12I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 970 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для NCE40H12I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE40H12I Datasheet (PDF)

 ..1. Size:392K  ncepower
nce40h12i.pdfpdf_icon

NCE40H12I

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.1. Size:401K  ncepower
nce40h12.pdfpdf_icon

NCE40H12I

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.2. Size:458K  ncepower
nce40h12k.pdfpdf_icon

NCE40H12I

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.3. Size:664K  ncepower
nce40h12a.pdfpdf_icon

NCE40H12I

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

Другие MOSFET... NCE4009S , NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , IRFB4227 , NCE40H12K , NCE40H20A , NCE40H21 , NCE40H29D , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S .

History: SWHA056R68E7T | NCE3068Q | PZ5S6JZ | IRFSL7787 | WMM08N80M3 | STI14NM65N | SM8003NF

 

 
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