All MOSFET. NCE40P13S Datasheet

 

NCE40P13S MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE40P13S
   Marking Code: 40P13
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 NCE40P13S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE40P13S Datasheet (PDF)

 ..1. Size:402K  ncepower
nce40p13s.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P13SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 7.1. Size:742K  ncepower
nce40p15q.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P15QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P15Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -15ADS Dor power management.R

 7.2. Size:349K  ncepower
nce40p15k.pdf

NCE40P13S NCE40P13S

NCE40P15Khttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)

 8.1. Size:397K  ncepower
nce40p70k.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P70KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.2. Size:294K  ncepower
nce40p40d.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P40DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 8.3. Size:470K  ncepower
nce40p40k.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P40KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)

 8.4. Size:293K  ncepower
nce40p05y.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)

 8.5. Size:637K  ncepower
nce40p25g.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P25GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P25G uses uses advanced trench technology toGeneral Featuresprovide excellent R , This device is suitable for use as a load V =-40V,I =-25ADS(ON) DS Dswitch or power management. R =11.5m (typical) @ V =10VDS(ON) GSR =18.5m (typical) @ V =4.5VApplication DS(ON) GS DC/

 8.6. Size:396K  ncepower
nce40p06s.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 8.7. Size:719K  ncepower
nce40p20q1.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P20Q1NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q1 uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R

 8.8. Size:371K  ncepower
nce40p05s.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

 8.9. Size:361K  ncepower
nce40p40l.pdf

NCE40P13S NCE40P13S

http://www.ncepower.com NCE40P40LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 8.10. Size:556K  ncepower
nce40p06j.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -

 8.11. Size:716K  ncepower
nce40p30k.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P30K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-40V,I =-30A Schematic diagramDS DR

 8.12. Size:683K  ncepower
nce40p20q.pdf

NCE40P13S NCE40P13S

http://www.ncepower.comNCE40P20QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R

 8.13. Size:446K  ncepower
nce40p07s.pdf

NCE40P13S NCE40P13S

Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

 8.14. Size:869K  cn vbsemi
nce40p05y.pdf

NCE40P13S NCE40P13S

NCE40P05Ywww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

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