NCE40P13S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE40P13S
Маркировка: 40P13
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 40 nC
trⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: SOP8
NCE40P13S Datasheet (PDF)
nce40p13s.pdf
Pb Free Producthttp://www.ncepower.com NCE40P13SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)
nce40p15q.pdf
http://www.ncepower.comNCE40P15QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P15Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -15ADS Dor power management.R
nce40p15k.pdf
NCE40P15Khttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)
nce40p70k.pdf
Pb Free Producthttp://www.ncepower.com NCE40P70KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)
nce40p40d.pdf
Pb Free Producthttp://www.ncepower.com NCE40P40DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)
nce40p40k.pdf
Pb Free Producthttp://www.ncepower.com NCE40P40KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)
nce40p05y.pdf
Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)
nce40p25g.pdf
http://www.ncepower.comNCE40P25GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P25G uses uses advanced trench technology toGeneral Featuresprovide excellent R , This device is suitable for use as a load V =-40V,I =-25ADS(ON) DS Dswitch or power management. R =11.5m (typical) @ V =10VDS(ON) GSR =18.5m (typical) @ V =4.5VApplication DS(ON) GS DC/
nce40p06s.pdf
Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)
nce40p20q1.pdf
http://www.ncepower.comNCE40P20Q1NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q1 uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R
nce40p05s.pdf
Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)
nce40p40l.pdf
http://www.ncepower.com NCE40P40LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)
nce40p06j.pdf
http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -
nce40p30k.pdf
http://www.ncepower.comNCE40P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P30K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-40V,I =-30A Schematic diagramDS DR
nce40p20q.pdf
http://www.ncepower.comNCE40P20QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R
nce40p07s.pdf
Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)
nce40p05y.pdf
NCE40P05Ywww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N6660JANTXV
History: 2N6660JANTXV
Список транзисторов
Обновления
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