NCE6020AI Specs and Replacement

Type Designator: NCE6020AI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO251

NCE6020AI substitution

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NCE6020AI datasheet

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NCE6020AI

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NCE6020AI

Pb Free Product http //www.ncepower.com NCE6020AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON) ... See More ⇒

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NCE6020AI

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NCE6020AI

Pb Free Product http //www.ncepower.com NCE6020A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R ... See More ⇒

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Detailed specifications: NCE55P30K, NCE6003, NCE6003M, NCE6003Y, NCE6005AR, NCE6008AS, NCE6009AS, NCE6012AS, AON6380, NCE6020AK, NCE6045G, NCE6050A, NCE6050IA, NCE6050KA, NCE6075, NCE6075K, NCE6080A

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs