NCE6020AI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE6020AI
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 2.6 ns
Cossⓘ - Выходная емкость: 60 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO251
NCE6020AI Datasheet (PDF)
nce6020ai.pdf
Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)
nce6020ak.pdf
Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)
nce6020al.pdf
Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR
nce6020a.pdf
Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR
nce6020aq.pdf
NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918