Справочник MOSFET. NCE6020AI

 

NCE6020AI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE6020AI
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 45 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 2.6 ns
   Выходная емкость (Cd): 60 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
   Тип корпуса: TO251

 Аналог (замена) для NCE6020AI

 

 

NCE6020AI Datasheet (PDF)

 ..1. Size:335K  ncepower
 nce6020ai.pdf

NCE6020AI NCE6020AI

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 6.1. Size:432K  ncepower
 nce6020ak.pdf

NCE6020AI NCE6020AI

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 6.2. Size:673K  ncepower
 nce6020al.pdf

NCE6020AI NCE6020AI

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 6.3. Size:688K  ncepower
 nce6020a.pdf

NCE6020AI NCE6020AI

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 6.4. Size:711K  ncepower
 nce6020aq.pdf

NCE6020AI NCE6020AI

NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R

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