Справочник MOSFET. NCE6020AI

 

NCE6020AI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6020AI
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 2.6 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для NCE6020AI

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6020AI Datasheet (PDF)

 ..1. Size:335K  ncepower
 nce6020ai.pdf pdf_icon

NCE6020AI

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 6.1. Size:432K  ncepower
 nce6020ak.pdf pdf_icon

NCE6020AI

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 6.2. Size:673K  ncepower
 nce6020al.pdf pdf_icon

NCE6020AI

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 6.3. Size:688K  ncepower
 nce6020a.pdf pdf_icon

NCE6020AI

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

ПОКАЗАТЬ ЕЩЁ

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History: FQP5N80 | DH100P40D | 2SK1723 | IRF9610PBF | SLD80R380SJ | NCEP6055AGU | PMV37EN2

 

 
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