NCE6050KA
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE6050KA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 5.1
nS
Cossⓘ -
Output Capacitance: 158
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
TO252
NCE6050KA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE6050KA
Datasheet (PDF)
..1. Size:414K ncepower
nce6050ka.pdf
Pb Free Producthttp://www.ncepower.com NCE6050KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
7.1. Size:360K ncepower
nce6050a.pdf
Pb Free Producthttp://www.ncepower.com NCE6050ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
7.2. Size:330K ncepower
nce6050ia.pdf
Pb Free Producthttp://www.ncepower.com NCE6050IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
8.1. Size:663K ncepower
nce6058k.pdf
http://www.ncepower.comNCE6058KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR
8.2. Size:356K ncepower
nce6058.pdf
Pb Free Producthttp://www.ncepower.com NCE6058NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)
8.3. Size:594K ncepower
nce6058ak.pdf
http://www.ncepower.comNCE6058AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR
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