Справочник MOSFET. NCE6050KA

 

NCE6050KA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6050KA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5.1 ns
   Cossⓘ - Выходная емкость: 158 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE6050KA

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6050KA Datasheet (PDF)

 ..1. Size:414K  ncepower
 nce6050ka.pdf pdf_icon

NCE6050KA

Pb Free Producthttp://www.ncepower.com NCE6050KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 7.1. Size:360K  ncepower
 nce6050a.pdf pdf_icon

NCE6050KA

Pb Free Producthttp://www.ncepower.com NCE6050ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 7.2. Size:330K  ncepower
 nce6050ia.pdf pdf_icon

NCE6050KA

Pb Free Producthttp://www.ncepower.com NCE6050IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 8.1. Size:663K  ncepower
 nce6058k.pdf pdf_icon

NCE6050KA

http://www.ncepower.comNCE6058KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE6008AS , NCE6009AS , NCE6012AS , NCE6020AI , NCE6020AK , NCE6045G , NCE6050A , NCE6050IA , 20N50 , NCE6075 , NCE6075K , NCE6080A , NCE6080D , NCE6080K , NCE609 , NCE60H15A , NCE60H15AD .

History: DMP2004VK | IPD036N04LG | IPAN80R360P7 | AOK065A60FD | AM70N10-44P | YJD90N02A | OSG65R580DF

 

 
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