All MOSFET. NCE6080A Datasheet

 

NCE6080A MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE6080A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 110 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.8 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 90.3 nC
   Rise Time (tr): 7 nS
   Drain-Source Capacitance (Cd): 290 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO220

 NCE6080A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE6080A Datasheet (PDF)

 ..1. Size:393K  ncepower
 nce6080a.pdf

NCE6080A NCE6080A

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 0.1. Size:600K  ncepower
 nce6080ak.pdf

NCE6080A NCE6080A

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =

 0.2. Size:801K  ncepower
 nce6080at.pdf

NCE6080A NCE6080A

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

 0.3. Size:757K  ncepower
 nce6080ai.pdf

NCE6080A NCE6080A

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

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