NCE6080A Specs and Replacement

Type Designator: NCE6080A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

NCE6080A substitution

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NCE6080A datasheet

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NCE6080A

Pb Free Product NCE6080A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica... See More ⇒

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 nce6080ak.pdf pdf_icon

NCE6080A

Pb Free Product NCE6080AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =6m (typical) @ V =10V Schematic diagram DS(ON) GS R =7m (typical) @ V =... See More ⇒

 0.2. Size:801K  ncepower
 nce6080at.pdf pdf_icon

NCE6080A

Pb Free Product NCE6080AT http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G... See More ⇒

 0.3. Size:757K  ncepower
 nce6080ai.pdf pdf_icon

NCE6080A

http //www.ncepower.com NCE6080AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V Schematic diagram DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G... See More ⇒

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Detailed specifications: NCE6020AI, NCE6020AK, NCE6045G, NCE6050A, NCE6050IA, NCE6050KA, NCE6075, NCE6075K, AO4407, NCE6080D, NCE6080K, NCE609, NCE60H15A, NCE60H15AD, NCE60P04R, NCE60P04Y, NCE60P06S

Keywords - NCE6080A MOSFET specs

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