NCE6080A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE6080A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 290 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE6080A
NCE6080A Datasheet (PDF)
nce6080a.pdf

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica
nce6080ak.pdf

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =
nce6080at.pdf

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G
nce6080ai.pdf

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G
Другие MOSFET... NCE6020AI , NCE6020AK , NCE6045G , NCE6050A , NCE6050IA , NCE6050KA , NCE6075 , NCE6075K , P60NF06 , NCE6080D , NCE6080K , NCE609 , NCE60H15A , NCE60H15AD , NCE60P04R , NCE60P04Y , NCE60P06S .
History: FMP03N60E | FDP8N50NZU | TPB70R950C | CS10N60A8HD | RS1G120MN | NTMFS4939NT1G | AP9435GP-HF
History: FMP03N60E | FDP8N50NZU | TPB70R950C | CS10N60A8HD | RS1G120MN | NTMFS4939NT1G | AP9435GP-HF



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor | fgpf4536 datasheet | p20nm60fp datasheet | 2sc1943