NCE65T680 MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCE65T680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO220

NCE65T680 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCE65T680 Datasheet (PDF)

..1. Size:761K ncepower
nce65t680f nce65t680 nce65t680d.pdf

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

..2. Size:761K ncepower
nce65t680.pdf

..3. Size:605K ncepower
nce65t680d nce65t680 nce65t680f.pdf

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

0.1. Size:491K ncepower
nce65t680i nce65t680k.pdf

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

0.2. Size:491K ncepower
nce65t680k.pdf