NCE65T680. Аналоги и основные параметры

Наименование производителя: NCE65T680

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 28 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65T680

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T680 даташит

 ..1. Size:761K  ncepower
 nce65t680f nce65t680 nce65t680d.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:761K  ncepower
 nce65t680.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:605K  ncepower
 nce65t680d nce65t680 nce65t680f.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 0.1. Size:491K  ncepower
 nce65t680i nce65t680k.pdf pdf_icon

NCE65T680

NCE65T680I NCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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