Справочник MOSFET. NCE65T680

 

NCE65T680 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65T680
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 28 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

NCE65T680 Datasheet (PDF)

 ..1. Size:761K  ncepower
 nce65t680f nce65t680 nce65t680d.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:761K  ncepower
 nce65t680.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:605K  ncepower
 nce65t680d nce65t680 nce65t680f.pdf pdf_icon

NCE65T680

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 0.1. Size:491K  ncepower
 nce65t680i nce65t680k.pdf pdf_icon

NCE65T680

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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