NCE65TF068T Specs and Replacement

Type Designator: NCE65TF068T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 435 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO247

NCE65TF068T substitution

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NCE65TF068T datasheet

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NCE65TF068T

NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DS technology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.... See More ⇒

 6.1. Size:1480K  ncepower
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NCE65TF068T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 6.2. Size:1480K  ncepower
 nce65tf099d.pdf pdf_icon

NCE65TF068T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 6.3. Size:578K  ncepower
 nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF068T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a... See More ⇒

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Detailed specifications: NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T, IRF640N, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D

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