NCE65TF068T. Аналоги и основные параметры
Наименование производителя: NCE65TF068T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 435 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 53 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 141 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.078 Ohm
Тип корпуса: TO247
Аналог (замена) для NCE65TF068T
- подборⓘ MOSFET транзистора по параметрам
NCE65TF068T даташит
nce65tf068t.pdf
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DS technology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
nce65tf099.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65tf099d.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65tf099d nce65tf099 nce65tf099f.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a
Другие IGBT... NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T, IRF640N, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D
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