NCE65TF360 Datasheet. Specs and Replacement

Type Designator: NCE65TF360  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220

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NCE65TF360 substitution

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NCE65TF360 datasheet

 ..1. Size:607K  ncepower
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NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion... See More ⇒

 ..2. Size:607K  ncepower
nce65tf360f nce65tf360 nce65tf360d.pdf pdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion... See More ⇒

 ..3. Size:607K  ncepower
nce65tf360d nce65tf360 nce65tf360f.pdf pdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion... See More ⇒

 0.1. Size:607K  ncepower
nce65tf360d.pdf pdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion... See More ⇒

Detailed specifications: NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, IRF630, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990, NCE6990D, NCE70T180D, NCE70T180

Keywords - NCE65TF360 MOSFET specs

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