NCE65TF360 datasheet, аналоги, основные параметры

Наименование производителя: NCE65TF360  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 101 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 54 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm

Тип корпуса: TO220

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Аналог (замена) для NCE65TF360

- подборⓘ MOSFET транзистора по параметрам

 

NCE65TF360 даташит

 ..1. Size:607K  ncepower
nce65tf360.pdfpdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion

 ..2. Size:607K  ncepower
nce65tf360f nce65tf360 nce65tf360d.pdfpdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion

 ..3. Size:607K  ncepower
nce65tf360d nce65tf360 nce65tf360f.pdfpdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion

 0.1. Size:607K  ncepower
nce65tf360d.pdfpdf_icon

NCE65TF360

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion

Другие IGBT... NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, IRFP250N, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990, NCE6990D, NCE70T180D, NCE70T180