NCE6990 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE6990
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 69 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 94 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 310 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220
NCE6990 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE6990 Datasheet (PDF)
..1. nce6990.pdf 
Size:399K _ncepower
Pb Free Producthttp://www.ncepower.com NCE6990NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)
0.1. nce6990d.pdf Size:435K _ncepower
Pb Free Producthttp://www.ncepower.com NCE6990DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)
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