All MOSFET. NCE6990 Datasheet

 

NCE6990 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE6990
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 69 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

 NCE6990 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE6990 Datasheet (PDF)

 ..1. Size:399K  ncepower
 nce6990.pdf

NCE6990 NCE6990

Pb Free Producthttp://www.ncepower.com NCE6990NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)

 0.1. Size:435K  ncepower
 nce6990d.pdf

NCE6990 NCE6990

Pb Free Producthttp://www.ncepower.com NCE6990DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)

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