All MOSFET. NCE6990 Datasheet

 

NCE6990 MOSFET. Datasheet pdf. Equivalent

Type Designator: NCE6990

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 69 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 94 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 310 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO220

NCE6990 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE6990 Datasheet (PDF)

..1. nce6990.pdf Size:399K _ncepower

NCE6990
NCE6990

Pb Free Producthttp://www.ncepower.com NCE6990NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)

0.1. nce6990d.pdf Size:435K _ncepower

NCE6990
NCE6990

Pb Free Producthttp://www.ncepower.com NCE6990DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =69V,ID =90A RDS(ON)

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