FDD13AN06A0 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD13AN06A0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 115 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm
FDD13AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD13AN06A0 Datasheet (PDF)
0.1. fdd13an06a0 f085.pdf 
Size:210K _fairchild_semi
September 2010FDD13AN06A0_F085N-Channel PowerTrench MOSFET60V, 50A, 13.5mFeatures Applications rDS(ON) = 11.5m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 22nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)
0.2. fdd13an06a0.pdf Size:281K _fairchild_semi
July 2003FDD13AN06A0N-Channel PowerTrench MOSFET60V, 50A, 13.5mFeatures Applications rDS(ON) = 11.5m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 22nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co
5.1. fdd13an06 f085.pdf Size:204K _fairchild_semi
September 2010FDD13AN06A0_F085N-Channel PowerTrench MOSFET60V, 50A, 13.5mFeatures Applications rDS(ON) = 11.5m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 22nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)
Datasheet: STU10N20 , FDC86244 , FDD050N03B , STU10N10 , FDD10AN06A0 , FDD10N20LZ , STU10L01 , FDD120AN15A0 , BF245A , FDD13AN06A0_F085 , FDD14AN06LA0_F085 , FDD16AN08A0 , FDD16AN08A0_F085 , FDD18N20LZ , STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 .
