All MOSFET. NCE9926 Datasheet

 

NCE9926 Datasheet and Replacement


   Type Designator: NCE9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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NCE9926 Datasheet (PDF)

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NCE9926

Pb Free Producthttp://www.ncepower.com NCE9926NCE N-Channel Enhancement Mode Power MOSFET Description The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A Schematic diagram RDS(ON)

Datasheet: NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D , NCE85H21 , NCE85H21C , NCE8804 , NCE9435 , IRF9640 , NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q , NCEP0135A , NCEP0135AK , NCEP0140AG , NCEP0160A .

History: LSB80R350GT | LSB65R070GF | AO3404A

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