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NCE9926 Specs and Replacement

Type Designator: NCE9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

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NCE9926 datasheet

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 nce9926.pdf pdf_icon

NCE9926

Pb Free Product http //www.ncepower.com NCE9926 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE8295AK, NCE82H110, NCE82H110D, NCE82H140D, NCE85H21, NCE85H21C, NCE8804, NCE9435, K2611, NCEP0112AS, NCEP0114AS, NCEP0116K, NCEP0120Q, NCEP0135A, NCEP0135AK, NCEP0140AG, NCEP0160A

Keywords - NCE9926 MOSFET specs

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