All MOSFET. NCEP0160F Datasheet

 

NCEP0160F Datasheet and Replacement


   Type Designator: NCEP0160F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: TO220F
 

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NCEP0160F Datasheet (PDF)

 ..1. Size:449K  ncepower
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NCEP0160F

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 6.1. Size:390K  ncepower
ncep0160ag.pdf pdf_icon

NCEP0160F

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.2. Size:428K  ncepower
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NCEP0160F

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 6.3. Size:432K  ncepower
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NCEP0160F

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

Datasheet: NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q , NCEP0135A , NCEP0135AK , NCEP0140AG , NCEP0160A , BS170 , NCEP0178A , NCEP0178AF , NCEP0178AK , NCEP018N85LL , NCEP01ND35AG , NCEP01T11 , NCEP01T12 , NCEP01T13 .

History: HYG060P04LQ1V | HIRF730F

Keywords - NCEP0160F MOSFET datasheet

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