NCEP0160F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP0160F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 8.5 ns
Cossⓘ - Выходная емкость: 273 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0108 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
NCEP0160F Datasheet (PDF)
ncep0160f.pdf

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep0160ag.pdf

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep0160a.pdf

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche
ncep0160.pdf

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
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History: QM2404J | NTP18N06 | HSU20N15A | WSF3410 | KNU4820B | NVD5C454NL | 2SK2882
History: QM2404J | NTP18N06 | HSU20N15A | WSF3410 | KNU4820B | NVD5C454NL | 2SK2882



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