NCEP01T13 Datasheet and Replacement
Type Designator: NCEP01T13
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 755 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220
NCEP01T13 substitution
NCEP01T13 Datasheet (PDF)
ncep01t13.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13ad.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13a.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13bd.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Datasheet: NCEP0160F , NCEP0178A , NCEP0178AF , NCEP0178AK , NCEP018N85LL , NCEP01ND35AG , NCEP01T11 , NCEP01T12 , 50N06 , NCEP01T13A , NCEP01T13AD , NCEP01T13D , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 .
History: IPP80P04P4-07 | KP8M6 | NP90N04VDK | IPP120N06NG | DMZ6005E | NTMFS5C609NLT1G | PSMN7R5-30YLD
Keywords - NCEP01T13 MOSFET datasheet
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History: IPP80P04P4-07 | KP8M6 | NP90N04VDK | IPP120N06NG | DMZ6005E | NTMFS5C609NLT1G | PSMN7R5-30YLD



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