NCEP01T13. Аналоги и основные параметры
Наименование производителя: NCEP01T13
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 78 ns
Cossⓘ - Выходная емкость: 755 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP01T13
- подборⓘ MOSFET транзистора по параметрам
NCEP01T13 даташит
ncep01t13.pdf
Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13ad.pdf
Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13a.pdf
Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13bd.pdf
Pb Free Product http //www.ncepower.com NCEP01T13BD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP0160F , NCEP0178A , NCEP0178AF , NCEP0178AK , NCEP018N85LL , NCEP01ND35AG , NCEP01T11 , NCEP01T12 , 50N06 , NCEP01T13A , NCEP01T13AD , NCEP01T13D , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 .
History: HM4822 | APT12060B2VFR
History: HM4822 | APT12060B2VFR
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Список транзисторов
Обновления
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