All MOSFET. NCEP023N85D Datasheet

 

NCEP023N85D MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP023N85D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 260 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 240 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 2050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO263

 NCEP023N85D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP023N85D Datasheet (PDF)

 ..1. Size:940K  ncepower
 ncep023n85d.pdf

NCEP023N85D NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 ..2. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf

NCEP023N85D NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:939K  ncepower
 ncep023n85m.pdf

NCEP023N85D NCEP023N85D

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex

 4.2. Size:940K  ncepower
 ncep023n85.pdf

NCEP023N85D NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.3. Size:400K  ncepower
 ncep023n85t.pdf

NCEP023N85D NCEP023N85D

NCEP023N85TNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFB5615PBF

 

 
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