Справочник MOSFET. NCEP023N85D

 

NCEP023N85D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP023N85D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 2050 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCEP023N85D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP023N85D Datasheet (PDF)

 ..1. Size:940K  ncepower
 ncep023n85d.pdf pdf_icon

NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 ..2. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf pdf_icon

NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:939K  ncepower
 ncep023n85m.pdf pdf_icon

NCEP023N85D

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex

 4.2. Size:940K  ncepower
 ncep023n85.pdf pdf_icon

NCEP023N85D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

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Другие MOSFET... NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 , NCEP023N10D , NCEP023N10LL , NCEP023N85 , IRFB4227 , NCEP02515K , NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 .

History: NP75P03YDG | 2SK981A | HYG025N04NA1C2 | NDB7060L | SSM5H90ATU | AO4900 | WML15N60C4

 

 
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