NCEP033N85D Datasheet and Replacement
Type Designator: NCEP033N85D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO263
NCEP033N85D substitution
NCEP033N85D Datasheet (PDF)
ncep033n85d.pdf

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep033n85 ncep033n85d.pdf

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep033n85.pdf

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep033n85m.pdf

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
Datasheet: NCEP02515K , NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , K3569 , NCEP035N85GU , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 .
History: 2N4856 | CRSS057N10N | 2N7271R2 | CEM4953A | BF909 | WTC2306 | IRF7425PBF-1
Keywords - NCEP033N85D MOSFET datasheet
NCEP033N85D cross reference
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History: 2N4856 | CRSS057N10N | 2N7271R2 | CEM4953A | BF909 | WTC2306 | IRF7425PBF-1



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