NCEP033N85D - аналоги и даташиты транзистора

 

NCEP033N85D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCEP033N85D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 115 nC
   tr ⓘ - Время нарастания: 12.5 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO263
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP033N85D Datasheet (PDF)

 ..1. Size:1095K  ncepower
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NCEP033N85D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 ..2. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf pdf_icon

NCEP033N85D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.1. Size:1095K  ncepower
 ncep033n85.pdf pdf_icon

NCEP033N85D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.2. Size:701K  ncepower
 ncep033n85m.pdf pdf_icon

NCEP033N85D

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP02515K , NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , K3569 , NCEP035N85GU , NCEP039N10 , NCEP039N10D , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 .

 

 
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