Справочник MOSFET. NCEP039N10D

 

NCEP039N10D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP039N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 135 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 11.5 ns
   Cossⓘ - Выходная емкость: 803 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCEP039N10D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP039N10D Datasheet (PDF)

 ..1. Size:1810K  ncepower
 ncep039n10d.pdf pdf_icon

NCEP039N10D

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

 ..2. Size:338K  ncepower
 ncep039n10 ncep039n10d.pdf pdf_icon

NCEP039N10D

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO

 4.1. Size:1515K  ncepower
 ncep039n10m.pdf pdf_icon

NCEP039N10D

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 4.2. Size:314K  ncepower
 ncep039n10f.pdf pdf_icon

NCEP039N10D

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP02580F , NCEP028N85 , NCEP028N85D , NCEP02T10D , NCEP033N85 , NCEP033N85D , NCEP035N85GU , NCEP039N10 , 12N60 , NCEP039N10M , NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D .

History: WSP4805 | ISCNL343D

 

 
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